VBsemi Elec-Single FETs, MOSFETs-SI4488DY-T1-E3-VB

Description

Drain to Source Voltage;150V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5.9W/RDS(on);85mΩ@8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.735nF/Output Capacitance(Coss);160pF


N-Channel 150V 5.4A 5.9W Surface Mount SO-8

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5.9W/RDS(on);85mΩ@8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$2.28 Excl. VAT

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5.9W/RDS(on);85mΩ@8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.735nF/Output Capacitance(Coss);160pF


    N-Channel 150V 5.4A 5.9W Surface Mount SO-8

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