VBsemi Elec-Single FETs, MOSFETs-SI4497DY-T1-GE3-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);27nC@10V/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);8mΩ@4.5V/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;3.49nF/Output Capacitance(Coss);1.42nF


P-Channel 30V 18A 3.1W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);27nC@10V/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);8mΩ@4.5V/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;3.49nF/Output Capacitance(Coss);1.42nFP-Channel 30V 18A 3.1W Surface... Read more

$1.32 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);27nC@10V/Type;P-Channel/Pd - Power Dissipation;3.1W/RDS(on);8mΩ@4.5V/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;3.49nF/Output Capacitance(Coss);1.42nF


    P-Channel 30V 18A 3.1W Surface Mount SO-8

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