VBsemi Elec-Single FETs, MOSFETs-Si4501BDY-T1-GE3-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);13.3nC@10V;13nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3W/RDS(on);11mΩ@10V;21mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);254pF;25pF/Current - Continuous Drain(Id);11A;10.5A/Gate Threshold Voltage (Vgs(th));2.2V;2.5V/Ciss-Input Capacitance;1.421nF;1.515nF/Output Capacitance(Coss);755pF;800pF


N-Channel+P-Channel 30V 11A 3W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);13.3nC@10V;13nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3W/RDS(on);11mΩ@10V;21mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);254pF;25pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);13.3nC@10V;13nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3W/RDS(on);11mΩ@10V;21mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);254pF;25pF/Current - Continuous Drain(Id);11A;10.5A/Gate Threshold Voltage (Vgs(th));2.2V;2.5V/Ciss-Input Capacitance;1.421nF;1.515nF/Output Capacitance(Coss);755pF;800pF


    N-Channel+P-Channel 30V 11A 3W Surface Mount SO-8

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