VBsemi Elec-Single FETs, MOSFETs-SI4590DY-T1-GE3-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);10nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.4W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);6.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;865pF/Output Capacitance(Coss);115pF


N-Channel+P-Channel Array 100V 6.3A 3.4W Surface Mount SO-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);10nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.4W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current -... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);10nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;3.4W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);6.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;865pF/Output Capacitance(Coss);115pF


    N-Channel+P-Channel Array 100V 6.3A 3.4W Surface Mount SO-8

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