VBsemi Elec-Single FETs, MOSFETs-SI4816DY-T1-E3-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);29nC@10V;39nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.98W;4.16W/RDS(on);17mΩ@10V;9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF;117pF/Current - Continuous Drain(Id);8A;12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.535nF;2.29nF/Output Capacitance(Coss);205pF;360pF


N-Channel 30V 8A 4.16W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);29nC@10V;39nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.98W;4.16W/RDS(on);17mΩ@10V;9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF;117pF/Current - Continuous Drain(Id);8A;12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$1.35 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);29nC@10V;39nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.98W;4.16W/RDS(on);17mΩ@10V;9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);91pF;117pF/Current - Continuous Drain(Id);8A;12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.535nF;2.29nF/Output Capacitance(Coss);205pF;360pF


    N-Channel 30V 8A 4.16W Surface Mount SO-8

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