VBsemi Elec-Single FETs, MOSFETs-SI4900DY-T1-E3-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11.7nC@10V/Number;2 N-Channel/Type;N-Channel/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;600pF/Output Capacitance(Coss);110pF


N-Channel Array 60V 7A Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);11.7nC@10V/Number;2 N-Channel/Type;N-Channel/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;600pF/Output Capacitance(Coss);110pFN-Channel Array... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11.7nC@10V/Number;2 N-Channel/Type;N-Channel/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;600pF/Output Capacitance(Coss);110pF


    N-Channel Array 60V 7A Surface Mount SO-8

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