VBsemi Elec-Single FETs, MOSFETs-SI4931DY-T1-E3-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);34.5nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);18mΩ@4.5V;22mΩ@2.5V;30mΩ@1.8V/Current - Continuous Drain(Id);8.9A/Gate Threshold Voltage (Vgs(th));1V


P-Channel 20V 8.9A 1.1W Surface Mount SO-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);34.5nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);18mΩ@4.5V;22mΩ@2.5V;30mΩ@1.8V/Current - Continuous Drain(Id);8.9A/Gate Threshold Voltage (Vgs(th));1VP-Channel 20V 8.9A 1.1W Surface Mount... Read more

$1.32 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);34.5nC@4.5V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);18mΩ@4.5V;22mΩ@2.5V;30mΩ@1.8V/Current - Continuous Drain(Id);8.9A/Gate Threshold Voltage (Vgs(th));1V


    P-Channel 20V 8.9A 1.1W Surface Mount SO-8

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account