VBsemi Elec-Single FETs, MOSFETs-SI4946BEY-T1-GE3-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);50nC@10V/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;600pF


N-Channel 60V 7A 1.3W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);50nC@10V/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;600pFN-Channel... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);50nC@10V/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);62pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;600pF


    N-Channel 60V 7A 1.3W Surface Mount SO-8

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