VBsemi Elec-Single FETs, MOSFETs-SI6968BEDQ-T1-GE3-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);18nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));1.6V


N-Channel 20V 7.6A 0.96W Surface Mount TSSOP-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);18nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));1.6VN-Channel 20V 7.6A 0.96W... Read more

$4.23 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);18nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;960mW/RDS(on);18mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));1.6V


    N-Channel 20V 7.6A 0.96W Surface Mount TSSOP-8

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