VBsemi Elec-Single FETs, MOSFETs-SI7923DN-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.8W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.8pF/Current - Continuous Drain(Id);6.4A/Gate Threshold Voltage (Vgs(th));3V


30V 60mΩ@4.5V 2 P-Channel 2.8W DFN-8-EP(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.8W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.8pF/Current - Continuous Drain(Id);6.4A/Gate Threshold Voltage (Vgs(th));3V30V... Read more

$3.24 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);21nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.8W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.8pF/Current - Continuous Drain(Id);6.4A/Gate Threshold Voltage (Vgs(th));3V


    30V 60mΩ@4.5V 2 P-Channel 2.8W DFN-8-EP(3x3) Single FETs, MOSFETs RoHS

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