VBsemi Elec-Single FETs, MOSFETs-SIA477EDJ-T1-GE3-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);54nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;17W/RDS(on);50mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);370pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);430pF


P-Channel 20V 20A 17W DFN2x2-6-EP

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);54nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;17W/RDS(on);50mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);370pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$1.86 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);54nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;17W/RDS(on);50mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);370pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);430pF


    P-Channel 20V 20A 17W DFN2x2-6-EP

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