VBsemi Elec-Single FETs, MOSFETs-SiA911ADJ-T1-GE3-VB
- VBsemi Elec
Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.8W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));3V30V 60mΩ@4.5V 2 P-Channel... Read more
$1.74 Excl. VAT
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