VBsemi Elec-Single FETs, MOSFETs-SiHB12N60E-GE3-VB
- VBsemi Elec
Drain to Source Voltage;650V/Gate Charge(Qg);71nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;228W/RDS(on);360mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more
$3.72 Excl. VAT
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