VBsemi Elec-Single FETs, MOSFETs-SiHU4N80E-VB

Description

Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;190W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.3nF/Output Capacitance(Coss);81pF


N-Channel 800V 5A 190W Through Hole TO-251

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;190W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);122nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;190W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.3nF/Output Capacitance(Coss);81pF


    N-Channel 800V 5A 190W Through Hole TO-251

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