VBsemi Elec-Single FETs, MOSFETs-SIR616DP-T1-GE3-VB
- VBsemi Elec
Drain to Source Voltage;200V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;66.6W/RDS(on);43mΩ@7.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$5.49 Excl. VAT
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