VBsemi Elec-Single FETs, MOSFETs-SIS426DN-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31.2W/RDS(on);5.7mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.45nF/Output Capacitance(Coss);445pF


20V 5.7mΩ@2.5V 1 N-channel 31.2W DFN-8-EP(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31.2W/RDS(on);5.7mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$2.58 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31.2W/RDS(on);5.7mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.45nF/Output Capacitance(Coss);445pF


    20V 5.7mΩ@2.5V 1 N-channel 31.2W DFN-8-EP(3x3) Single FETs, MOSFETs RoHS

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