VBsemi Elec-Single FETs, MOSFETs-SIS890DN-T1-GE3-VB
- VBsemi Elec
Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;52W/RDS(on);20.5mΩ@7.5V/Reverse Transfer Capacitance (Crss@Vds);11.2pF/Current - Continuous Drain(Id);35.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.47nF/Output Capacitance(Coss);132pFN-Channel... Read more
$3.81 Excl. VAT
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