VBsemi Elec-Single FETs, MOSFETs-SP8M51-TB-VB

Description

Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V;24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2.5W;1.8W/RDS(on);240mΩ@10V;490mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF;40pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);2.2A;1.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;600pF;510pF/Output Capacitance(Coss);130pF;65pF


N-Channel+P-Channel 100V 2.2A 2.5W Surface Mount SO-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V;24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2.5W;1.8W/RDS(on);240mΩ@10V;490mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF;40pF/Configuration;Half-Bridge/Current -... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V;24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;2.5W;1.8W/RDS(on);240mΩ@10V;490mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF;40pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);2.2A;1.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;600pF;510pF/Output Capacitance(Coss);130pF;65pF


    N-Channel+P-Channel 100V 2.2A 2.5W Surface Mount SO-8

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