VBsemi Elec-Single FETs, MOSFETs-SPA11N60CFD-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;2.414nF/Output Capacitance(Coss);118pF


N-Channel 650V 20A 30W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);110nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);170mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;2.414nF/Output Capacitance(Coss);118pF


    N-Channel 650V 20A 30W Through Hole TO-220F

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