VBsemi Elec-Single FETs, MOSFETs-SPP80N03S2L-04-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Pd - Power Dissipation;175W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);370pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.1nF


N-Channel 30V 120A 175W Through Hole TO-220AB

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Pd - Power Dissipation;175W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);370pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Pd - Power Dissipation;175W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);370pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.1nF


    N-Channel 30V 120A 175W Through Hole TO-220AB

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