VBsemi Elec-Single FETs, MOSFETs-SQ2309ES-T1-GE3-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);12nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;27W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;270pF/Output Capacitance(Coss);170pF


P-Channel 60V 3.8A 27W Surface Mount SOT-23(TO-236)

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);12nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;27W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$4.14 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);12nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;27W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);31pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;270pF/Output Capacitance(Coss);170pF


    P-Channel 60V 3.8A 27W Surface Mount SOT-23(TO-236)

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