VBsemi Elec-Single FETs, MOSFETs-SQP50P03-07-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);29.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.7W/RDS(on);8mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);55.9A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.55nF/Output Capacitance(Coss);455pF


P-Channel 30V 55.9A 2.7W Through Hole TO-220AB-3

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);29.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.7W/RDS(on);8mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);55.9A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.55nF/Output Capacitance(Coss);455pFP-Channel... Read more

$2.37 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);29.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.7W/RDS(on);8mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);390pF/Current - Continuous Drain(Id);55.9A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;2.55nF/Output Capacitance(Coss);455pF


    P-Channel 30V 55.9A 2.7W Through Hole TO-220AB-3

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