VBsemi Elec-Single FETs, MOSFETs-SS101-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);20nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.2V


20V 40mΩ@1.8V 1 P-Channel 19W SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);20nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.2V20V 40mΩ@1.8V 1 P-Channel... Read more

$1.41 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);20nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;19W/RDS(on);40mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));1.2V


    20V 40mΩ@1.8V 1 P-Channel 19W SO-8 Single FETs, MOSFETs RoHS

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