VBsemi Elec-Single FETs, MOSFETs-STD16NF06LT4-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.5nF/Output Capacitance(Coss);140pF


N-Channel 60V 45A 100W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.5nF/Output Capacitance(Coss);140pF


    N-Channel 60V 45A 100W Surface Mount TO-252

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