VBsemi Elec-Single FETs, MOSFETs-STD35NF06T4-VB

Description

Drain to Source Voltage;60V/Gate Charge(Qg);47nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);225pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.65nF/Output Capacitance(Coss);470pF


N-Channel 60V 58A 136W Surface Mount TO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);47nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);225pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);47nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);13mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);225pF/Current - Continuous Drain(Id);58A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.65nF/Output Capacitance(Coss);470pF


    N-Channel 60V 58A 136W Surface Mount TO-252

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