VBsemi Elec-Single FETs, MOSFETs-STD95N2LH5-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);103nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.13W/RDS(on);3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V


N-Channel 30V 100A 3.13W Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);103nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.13W/RDS(on);3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5VN-Channel 30V 100A 3.13W... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);103nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.13W/RDS(on);3mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V


    N-Channel 30V 100A 3.13W Surface Mount TO-252

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