VBsemi Elec-Single FETs, MOSFETs-STF2N80K5-VB

Description

Drain to Source Voltage;850V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);2.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;816pF/Output Capacitance(Coss);68pF


N-Channel 850V 5.5A 45W Through Hole TO-220F

Product form

Drain to Source Voltage;850V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);2.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;850V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);2.4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);5.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;816pF/Output Capacitance(Coss);68pF


    N-Channel 850V 5.5A 45W Through Hole TO-220F

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