VBsemi Elec-Single FETs, MOSFETs-STJ009-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);16nC@10V/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);33mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));2V


P-Channel 30V 5.8A 1.3W Surface Mount SO-8

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Drain to Source Voltage;30V/Gate Charge(Qg);16nC@10V/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);33mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));2VP-Channel 30V 5.8A 1.3W Surface... Read more

$4.14 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);16nC@10V/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);33mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));2V


    P-Channel 30V 5.8A 1.3W Surface Mount SO-8

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