VBsemi Elec-Single FETs, MOSFETs-TK11A65D-VB

Description

Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);650mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);300pF


N-Channel 650V 12A Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);650mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);300pFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);650mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.6nF/Output Capacitance(Coss);300pF


    N-Channel 650V 12A Through Hole TO-220F

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