VBsemi Elec-Single FETs, MOSFETs-TK290A60Y-VB

Description

Drain to Source Voltage;600V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;80W/RDS(on);240mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.75nF/Output Capacitance(Coss);80pF


N-Channel 600V 15A 80W Through Hole TO-220F

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;80W/RDS(on);240mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;80W/RDS(on);240mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.75nF/Output Capacitance(Coss);80pF


    N-Channel 600V 15A 80W Through Hole TO-220F

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