VBsemi Elec-Single FETs, MOSFETs-VBE2101M

Description

Drain to Source Voltage;100V/Gate Charge(Qg);23.2nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;32.1W/RDS(on);100mΩ@10V;120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);41pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.055nF/Output Capacitance(Coss);65pF


P-Channel 100V 16A 32.1W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);23.2nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;32.1W/RDS(on);100mΩ@10V;120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);41pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);23.2nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;32.1W/RDS(on);100mΩ@10V;120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);41pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.055nF/Output Capacitance(Coss);65pF


    P-Channel 100V 16A 32.1W Surface Mount TO-252

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