VBsemi Elec-Single FETs, MOSFETs-VBFB1203M

Description

Drain to Source Voltage;200V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);270mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;800pF/Output Capacitance(Coss);100pF


N-Channel 200V 8A 96W Through Hole TO-251

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);270mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);51nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);270mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;800pF/Output Capacitance(Coss);100pF


    N-Channel 200V 8A 96W Through Hole TO-251

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