VBsemi Elec-Single FETs, MOSFETs-VBFB1311

Description

Drain to Source Voltage;30V/Gate Charge(Qg);33nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;28W/RDS(on);7mΩ@10V;9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.7nF/Output Capacitance(Coss);200pF


N-Channel 30V 50A 28W Through Hole TO-251

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);33nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;28W/RDS(on);7mΩ@10V;9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);33nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;28W/RDS(on);7mΩ@10V;9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.7nF/Output Capacitance(Coss);200pF


    N-Channel 30V 50A 28W Through Hole TO-251

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