VBsemi Elec-Single FETs, MOSFETs-VBFB1410

Description

Drain to Source Voltage;40V/Gate Charge(Qg);25nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2.7W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.1nF


40V 13mΩ@10V 1 N-channel 2.7W TO-251 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);25nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2.7W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.1nF40V 13mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);25nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2.7W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.1nF


    40V 13mΩ@10V 1 N-channel 2.7W TO-251 Single FETs, MOSFETs RoHS

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