Drain to Source Voltage;100V/Gate Charge(Qg);11nC@50V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);215mΩ@10V/Operating Temperature -;-55℃~+150℃/Ciss-Input Capacitance;1.055nF100V 215mΩ@10V 1 P-Channel 2.5W TO-251 Single FETs, MOSFETs... Read more

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