VBsemi Elec-Single FETs, MOSFETs-VBFB2658

Description

Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Pd - Power Dissipation;38.5W/RDS(on);53mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);25A/Ciss-Input Capacitance;1.71nF


60V 53mΩ@10V 1 P-Channel 38.5W TO-251 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Pd - Power Dissipation;38.5W/RDS(on);53mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);25A/Ciss-Input Capacitance;1.71nF60V 53mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Pd - Power Dissipation;38.5W/RDS(on);53mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);25A/Ciss-Input Capacitance;1.71nF


    60V 53mΩ@10V 1 P-Channel 38.5W TO-251 Single FETs, MOSFETs RoHS

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