VBsemi Elec-Single FETs, MOSFETs-VBGP1201N

Description

Drain to Source Voltage;200V/Gate Charge(Qg);75nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;6.8nF/Output Capacitance(Coss);246pF


N-Channel 200V 110A 150W Through Hole TO-247AC

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);75nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);75nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;6.8nF/Output Capacitance(Coss);246pF


    N-Channel 200V 110A 150W Through Hole TO-247AC

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