VBsemi Elec-Single FETs, MOSFETs-VBMB1101N

Description

Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.55nF/Output Capacitance(Coss);665pF


N-Channel 100V 6A 56W Through Hole TO-220F

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$3.63 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;56W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.55nF/Output Capacitance(Coss);665pF


    N-Channel 100V 6A 56W Through Hole TO-220F

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