VBsemi Elec-Single FETs, MOSFETs-VBMB1104N

Description

Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);34mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;5.1nF


100V 34mΩ@10V 1 N-channel 3.7W TO-220F-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);34mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$2.28 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.7W/RDS(on);34mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);210pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;5.1nF


    100V 34mΩ@10V 1 N-channel 3.7W TO-220F-3 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account