VBsemi Elec-Single FETs, MOSFETs-VBMB1203M

Description

Drain to Source Voltage;200V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;37W/RDS(on);265mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);260pF


N-Channel 200V 6.5A 37W Through Hole TO-220F

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;37W/RDS(on);265mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;37W/RDS(on);265mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;560pF/Output Capacitance(Coss);260pF


    N-Channel 200V 6.5A 37W Through Hole TO-220F

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