VBsemi Elec-Single FETs, MOSFETs-VBMB1206N

Description

Drain to Source Voltage;200V/Gate Charge(Qg);57nC@10V/Type;N-Channel/Pd - Power Dissipation;55W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);135pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);300pF


N-Channel 200V 40A 55W Through Hole TO-220F

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);57nC@10V/Type;N-Channel/Pd - Power Dissipation;55W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);135pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.2nF/Output... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);57nC@10V/Type;N-Channel/Pd - Power Dissipation;55W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);135pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);300pF


    N-Channel 200V 40A 55W Through Hole TO-220F

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