VBsemi Elec-Single FETs, MOSFETs-VBMB1302

Description

Drain to Source Voltage;30V/Gate Charge(Qg);81.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.75W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);28.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.7nF


N-Channel 30V 28.8A 3.75W Through Hole TO-220F

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);81.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.75W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);28.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$3.30 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);81.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.75W/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);28.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.7nF


    N-Channel 30V 28.8A 3.75W Through Hole TO-220F

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