VBsemi Elec-Single FETs, MOSFETs-VBMB155R18

Description

Drain to Source Voltage;550V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);260mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.094nF


N-Channel 550V 11A 60W Through Hole TO-220F

Product form

Drain to Source Voltage;550V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);260mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;550V/Gate Charge(Qg);150nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);260mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.094nF


    N-Channel 550V 11A 60W Through Hole TO-220F

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