VBsemi Elec-Single FETs, MOSFETs-VBMB1606

Description

Drain to Source Voltage;60V/Gate Charge(Qg);47nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);525pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.65nF/Output Capacitance(Coss);1.12nF


N-Channel 60V 120A Through Hole TO-220F

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);47nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);525pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.65nF/Output Capacitance(Coss);1.12nFN-Channel 60V... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);47nC@10V/Number;1 N-channel/Type;N-Channel/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);525pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.65nF/Output Capacitance(Coss);1.12nF


    N-Channel 60V 120A Through Hole TO-220F

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