VBsemi Elec-Single FETs, MOSFETs-VBMB165R04

Description

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.08nF


650V 2.5Ω@10V 1 N-channel 30W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$2.07 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.08nF


    650V 2.5Ω@10V 1 N-channel 30W TO-220-3 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account