VBsemi Elec-Single FETs, MOSFETs-VBMB16R08

Description

Drain to Source Voltage;600V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;37W/RDS(on);880mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.1pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;890pF/Output Capacitance(Coss);180pF


N-Channel 600V 8A 37W Through Hole TO-220F

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;37W/RDS(on);880mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.1pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;37W/RDS(on);880mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.1pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;890pF/Output Capacitance(Coss);180pF


    N-Channel 600V 8A 37W Through Hole TO-220F

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