VBsemi Elec-Single FETs, MOSFETs-VBN165R04

Description

Drain to Source Voltage;650V/Gate Charge(Qg);350nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF/Output Capacitance(Coss);960pF


N-Channel 650V 4A Through Hole TO-262

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);350nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);350nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;530W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.1nF/Output Capacitance(Coss);960pF


    N-Channel 650V 4A Through Hole TO-262

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