VBsemi Elec-Single FETs, MOSFETs-VBP15R20S

Description

Drain to Source Voltage;500V/Gate Charge(Qg);92nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;179W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.64nF/Output Capacitance(Coss);87pF


N-Channel 500V 20A 179W Through Hole TO-247AC

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);92nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;179W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);92nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;179W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.64nF/Output Capacitance(Coss);87pF


    N-Channel 500V 20A 179W Through Hole TO-247AC

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