VBsemi Elec-Single FETs, MOSFETs-VBP17R20SE

Description

Drain to Source Voltage;700V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.3nF/Output Capacitance(Coss);330pF


N-Channel 700V 20A 200W Through Hole TO-247AC

Product form

Drain to Source Voltage;700V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.3nF/Output... Read more

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    Description

    Drain to Source Voltage;700V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.3nF/Output Capacitance(Coss);330pF


    N-Channel 700V 20A 200W Through Hole TO-247AC

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