VBsemi Elec-Single FETs, MOSFETs-VBZA9945

Description

Drain to Source Voltage;60V/Gate Charge(Qg);18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;600pF/Output Capacitance(Coss);110pF


N-Channel Array 60V 8A 4W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;4W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;600pF/Output Capacitance(Coss);110pF


    N-Channel Array 60V 8A 4W Surface Mount SO-8

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